Transistors silicon KP305J (KP305ZH) = MFE3002, BF543 USSR Lot of 5 pcs

Description

Transistors silicon KP305J (KP305ZH) = MFE3002, BF543
USSR
Lot of 5 pcs
New, never used  / NOS / New Old Stock/
KP305ZH
Transistors KP305ZH silicon diffusion planar insulated gate field and the n-channel type.
KP305ZH:
• transistor structure: an insulated gate and the n-channel;
• RCI max - Power dissipation drain-source: 150 mW;
• Uzi UTS - voltage cut-off of the transistor - the voltage between gate and source: not less than 6;
• Usi max - The maximum drain-source voltage: 15 V;
• Uzs max - Maximum gate-drain voltage of 15 V;
• Uzi max - maximum gate-source voltage: 15 V;
• Ic - drain current (DC) 15 mA
• S - Slope: 5.2 ... 10.5 mA / V;
• S11i - The input capacitance of the transistor - the capacitance between the gate and the source: not more than 5 pF;
• S12i - Capacity feedback circuit with a common source with a short circuit at the input AC: not more than 0.8 pF;
• Ku.r - Gain of power: not less than 13 dB at 250 MHz;
• Rm - Noise factor of the transistor: not more than 7.5 dB at 250 MHz
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